| PART |
Description |
Maker |
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| IDT70825L20G IDT70825L35G IDT70825L45G IDT70825S45 |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
Cabinet Rack Front Panel RoHS Compliant: Yes 8K X 16 STANDARD SRAM, 20 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 35 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 20 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
SRAM
Integrated Device Technology, Inc.
|
| ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列
EIGHT DARLINGTON ARRAYS
|
STMicroelectronics N.V.
Allegro MicroSystems
STMICROELECTRONICS[STMicroelectronics]
|
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Ramtron International Corporation
|
| L9310 |
Line Interface and Line Access Circuit，Full-Feature SLIC, Ringing Relay, and Test Access Device(线接口和线存取电路，特点齐全的用户接口、振铃继电器和存取测试器
|
Lineage Power
|
| EDI9LC644V1312BC EDI9LC644V1310BC EDI9LC644V1512BC |
SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
|
White Electronic Designs
|
| WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
|
White Electronic Designs
|
| SDA9251-2X SDA92512 SDA9251-2XGEG |
868352-Bit Dynamic Sequential Access Memory for Television Applications (TV-SAM) 212K X 4 VIDEO DRAM, 25 ns, PDSO28
From old datasheet system
868352-Bit Dynamic Sequential Access ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory
128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MCM6249 MCM6249WJ2 MCM6249WJ3 MCM6249WJ35R2 MCM624 |
1M X 4 bit static random access memory
1M x4 Bit Static Random Access Memory
CRYSTALS 30/50 0 70 20PF 20.000MHZ ATCUT FUND HC-49/UP
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| 5962-89518012X 5962-8951801RX 5962-89518012A |
1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CQCC20
1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP20
High Speed, µP-Compatible, CMOS, 8-Bit Sampling ADC; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military
|
ANALOG DEVICES INC
|
